GaN ICs are based on the semiconductor material gallium nitride, which enables high efficiency and power density thanks to its exceptional physical properties. Compared to silicon, GaN components have a higher electrical breakdown strength, lower switching losses and a faster response time.
The structure of a GaN IC combines active GaN components such as transistors with integrated circuits that provide control and signal processing. This combination allows compact designs that require less space and cooling.
In power electronics, such as chargers or energy supply systems, GaN ICs are used to convert energy more efficiently and precisely control circuits. They are an essential component of modern, sustainable technologies and are driving innovation in the electronics industry.
GaN ICs play a crucial role in the development of semiconductor solutions in Europe and the advancement of semiconductor technology in Germany. As a key component, they not only enable more efficient systems in power electronics, but also promote the competitiveness of European companies on the global market. Particularly in Germany, a center for technical innovation, GaN-based technologies are driving the development of new applications in areas such as electromobility, renewable energies and industrial automation.