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Added value distributor and development

insulated-gate bipolar transistor

  • Low switching losses thanks to trench-gate field-stop technology
  • High current and voltage stability for industrial continuous load
  • Optimal solution for SMPS, UPS and PFC applications
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Bipolar transistor with insulated gate electrode
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Bourns' range of insulated gate bipolar transistors

PhotoSeriesPackageFeatureVCE [V]IC @ T=100 ˚C [A]Typ. VCE(sat) @ Ic, Vge=15 V [V]IF @ T=100 ˚C [A]Operating Junction TemperatureData Sheet
BIDD05N60TTO-252Medium speed60051.5N/A–55 °C to +150 °C
BIDW20N60TTO-247Medium speed600201.720–55 °C to +150 °C
BIDW30N60TTO-247Medium speed600301.6530–55 °C to +150 °C
BIDW50N65TTO-247Medium speed650501.6550–55 °C to +150 °C
BIDNW30N60H3TO-247NHigh speed600301.6512–55 °C to +150 °C
BIDW40N65H5TO-247High speed650401.6520–40 °C to +175 °C
BIDW40N65ES5TO-247Efficient Medium Speed650401.3540–40 °C to +175 °C
BIDW75N65EH5TO-247Efficient High Speed650751.6575–40 °C to +175 °C
BIDW75N65ES5TO-247Efficient Medium Speed650751.4275–40 °C to +175 °C

Bipolar transistor with insulated gate electrode for high-current applications

A bipolar transistor with an insulated gate electrode - also known as an IGBT - combines the high-current conductivity of a bipolar transistor with the voltage-controlled activation of a MOSFET. The control electrode is galvanically isolated from the main current path, which means that only a minimal control current is required.

The BID series from our partner Bourns uses trench-gate field-stop technology. This structure enables improved controllability of the switching behavior, reduces switching losses and lowers the collector-emitter saturation voltage. The high robustness and low thermal resistance (RTH) ensure reliable operation even under continuous load.

IGBTs of this type are optimized for use in high-voltage and high-current applications and are used in switching power supplies, PFC circuits and industrial drives, among other things.

Bipolar transistor with insulated gate electrode for SMPS and PFC systems

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Bipolar transistor with insulated gate electrode for SMPS applications

Bipolar transistors with an insulated gate electrode have become indispensable in modern power electronics, as they can switch high voltages and currents efficiently. Particularly in switched-mode power supplies (SMPS), they enable a compact design with high energy efficiency. Thanks to their low switching losses and low saturation voltage, IGBTs are ideal for industrial applications where energy savings and thermal stability are crucial.

In uninterruptible power supplies (UPS), they ensure a reliable and uninterrupted power supply - even in the event of mains faults. In PFC (Power Factor Correction) circuits, they help to optimize the power factor and minimize grid perturbations.

The BID series from our partner Bourns offers the right technology for this: high robustness, optimized thermal properties and precise controllability thanks to trench-gate field-stop structures. As a distributor, ROTIMA supplies these solutions precisely tailored to your application - whether for industrial drive systems, power supplies or automation technology.
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Bipolar transistor with insulated gate electrode for industrial applications

Bipolar transistors with an insulated gate electrode have become indispensable in modern power electronics, as they can switch high voltages and currents efficiently. Particularly in switched-mode power supplies (SMPS), they enable a compact design with high energy efficiency. Thanks to their low switching losses and low saturation voltage, IGBTs are ideal for industrial applications where energy savings and thermal stability are crucial.

In uninterruptible power supplies (UPS), they ensure a reliable and uninterrupted power supply - even in the event of mains faults. In PFC (Power Factor Correction) circuits, they help to optimize the power factor and minimize grid perturbations.

The BID series from our partner Bourns offers the right technology for this: high robustness, optimized thermal properties and precise controllability thanks to trench-gate field-stop structures. As a distributor, ROTIMA supplies these solutions precisely tailored to your application - whether for industrial drive systems, power supplies or automation technology.
Transistors - IGBT from Bourns
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Further information on bipolar transistor with insulated gate electrode

In this section, we have compiled the most important questions on the subject of bipolar transistors with insulated gate electrodes for you. Here you will find useful information on the basics, the areas of application and the advantages of our products
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