Transistors consist of semiconductor material at their core, usually silicon, which is divided into three areas: collector, base and emitter. In the electronics industry, they are used to switch or amplify electrical signals. IGBT transistors, such as those offered by Bourns, combine MOS gate technology with bipolar conductivity. This structure enables high switching speeds, low power dissipation and robust thermal performance.
Thanks to modern trench-gate field-stop technology, the dynamic behaviour of the transistors is optimized. This reduces the collector-emitter saturation voltage (VCE(sat)), resulting in higher energy efficiency and lower switching losses.